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An array of metal-ferroelectric-semiconductor field effect transistors (MFSFETs) is fabricated on a silicon-on-insulator (SOI) structure using SrBi/sub 2/Ta/sub 2/O/sub 9/ as the gate insulator. It is demonstrated that each FET shows good characteristics as a nonvolatile analog memory due to partial polarization of the SrBi/sub 2/Ta/sub 2/O/sub 9/ film and that the array operates as an electrically modifiable synapse circuit for carrying out the weighted sum operation in an artificial neural network.
Yoon et al. (Sat,) studied this question.
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