High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs

This letter presents high-performance millimeter-wave InGaN channel double-heterostructure high-electron-mobility transistors (DH-HEMTs) fabricated using a recess gate oxidation process. The device with a 2 μm source-drain distance achieves a remarkable breakdown voltage of 76 V. When subjected to off-state high field bias conditions (-8 V, 30 V), the device exhibits a low saturation current collapse ratio of 8.1%. In 30 GHz large-signal power measurements, the device achieves a high saturation power density of 9.6 W/mm atVDS=28 V and a high power-added efficiency (PAE) of 48.54% atVDS=14 V. High-temperature stability test of the InGaN channel DH-HEMTs was also evaluated. These results substantiate the significant potential of InGaN channel DH-HEMTs for millimeter-wave applications.