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September 24, 2007IEEE Transactions on Electron Devices

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

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Authors

GJGregg H. JessenRFRobert FitchJGJ. Gillespie

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Jessen et al. (2007) studied this question.

synapsesocial.com/papers/6a6f1ce278a11c550e08c8a8https://doi.org/10.1109/ted.2007.904476
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