Los puntos clave no están disponibles para este artículo en este momento.
636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20°C and CW operation of 3mW was attained at up to 48°C.
Itaya et al. (Thu,) studied this question.