Study achieves continuous wave operation in temperature-controlled laser diodes, indicating innovative design benefits.
636 nm room temperature CW operation has been achieved by heterobarrier blocking structure InGaAlP laser diodes with a quaternary active layer. This structure was fabricated by two-step metal-organic chemical vapour deposition. The threshold current was 102 mA at 20°C and CW operation of 3mW was attained at up to 48°C.
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Itaya et al. (1990) studied this question.
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