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September 2, 1991Applied Physics Letters

Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy

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Authors

HCH. K. ChoiKongju National UniversitySEStephen EglashOak Ridge National Laboratory

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Choi et al. (1991) studied this question.

synapsesocial.com/papers/6a796e1afb5b6b43000db232https://doi.org/10.1063/1.105544
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Also Consider

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  1. 1Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm1990 · 54 citations
  2. 22.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density1987 · 41 citations
  3. 3Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength1980 · 46 citations
  4. 4Nonlinearities in the emission characteristics of stripe-geometry (AlGa)As double-heterostructure junction lasers1976 · 97 citations
  5. 5Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy1986 · 51 citations