InGaAsP/InGaAsP double-heterostructure laser diodes with wavelength as short as 621.4 nm at room temperature were demonstrated and their growth conditions were described. The laser diodes were constructed by InGaAsP grown on GaAs 0.61 P 0.39 substrates by liquid phase epitaxy. Their threshold current densities were approximately 1.19×10 5 A/cm 2 in pulsed room temperature operation.
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Fujimoto et al. (1982) studied this question.
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