High power AlGaInP laser diodes at 626 nm

We successfully designed and fabricated semiconductor lasers emitting at 626 nm at room-temperature to improve research and scaling of 9Be+ ion qubits. The design is based on the calculation of the energy band structure by k·p theory for strained semiconductors, the vertically guided mode, and the modal gain in dependence of carrier density as well as threshold sheet densities and wavelengths. Promising designs are grown on three-inch wafers by metal-organic vapor-phase epitaxy for experimental investigations. Broad area lasers are used for evaluation of the laser performance.