Experimental study demonstrates 579 nm yellow pulsed lasing in an AlGaInP double heterostructure at 77 K, indicating viable fabrication via atmospheric metalorganic chemical vapor deposition.
Yellow-emitting pulsed laser operation of an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/ Al0.37Ga0.15In0.48P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm2 for a diode with a Si3N4 insulated 8-μm-wide and 250-μm-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.
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Ikeda et al. (1984) studied this question.
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