Data demonstrate continuous laser operation at 625 nm in quantum well heterostructures, suggesting advancements in laser technology.
Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In1−y(AlxGa1−x)yP-In1−y (AlxGa1−x)yP quantum well heterostructures grown lattice matched (y≊0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (Jth∼104 A/cm2, 625 nm) of diodes fabricated from the same crystal is described.
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Nam et al. (1988) studied this question.
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