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Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
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Fischer et al. (1989) studied this question.
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