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January 1, 1985Journal of Applied Physics

Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasers

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Authors

WLW. D. LaidigNorth Carolina State UniversityYLY. F. LinNational Chi Nan UniversityPCP. J. CaldwellLockheed Martin (United States)

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Laidig et al. (1985) studied this question.

synapsesocial.com/papers/6a70d951a528af2d65c3c72ahttps://doi.org/10.1063/1.335391
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