Randomized trial demonstrates continuous operation of photopumped lasers in GaAs, suggesting viability for practical applications.
Room-temperature continuous operation (cw, 300 °K) of photopumped AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well heterostructure lasers embedded in Cu under diamond windows is demonstrated. The quantum-well heterostructures are grown by metalorganic chemical vapor deposition (MO-CVD) and possess undoped (nd−na≲1015/cm3) or compensated (nZn∼1019/cm3, nSe∼8×1018/cm3) GaAs active layers of thickness Lz∼200 Å.
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Holonyak et al. (1978) studied this question.
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