Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 15, 1978Applied Physics Letters

Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

NHN. HolonyakGeneral Electric (United States)RKR. M. KolbasRutgers, The State University of New JerseyWLW. D. LaidigNorth Carolina State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Holonyak et al. (1978) studied this question.

synapsesocial.com/papers/6a1d287b68a6eca4522f46bbhttps://doi.org/10.1063/1.90522
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers1978 · 68 citations
  2. 2Room-temperature laser operation of quantum-well Ga(1−x)AlxAs-GaAs laser diodes grown by metalorganic chemical vapor deposition1978 · 177 citations
  3. 3Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junction1977 · 48 citations
  4. 4Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures1975 · 217 citations
  5. 5Optical waveguides in GaAs–AlGaAs epitaxial layers1973 · 168 citations