600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)

The 600 nm-range GaInP/AlInP multi-quantum-well (MQW) lasers grown by gas-source molecular beam epitaxy were investigated. Nonradiative recombination at heterointerfaces was drastically reduced by use of superlattice cladding (SLC) layers and 15° misoriented substrates (from (100) toward the [011] direction), resulting in increments of PL peak intensities from active layers by factors of 20 and 2, respectively. In addition to these effects, we changed the well numbers optimizing at three. As a result, a very low threshold current density ( J th ) of 2.0 kA/cm 2 was obtained at a lasing wavelength of 629nm, without strain effects. Finally, experimental rapid deterioration of J th and characteristic temperatures by shortening of the wavelengths was explained by leakage current components over the heterobarrier.