GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs

GaInP/AlInP single quantum well structures and double heterostructure lasers have been grown by molecular beam epitaxy at 510°C with the dimetric phosphorus beam. The peak energy and linewidth of the photoluminescence spectrum at 10 K from quantum wells as a function of well width have been studied. A 10- µm wide stripe-geometry GaInP/AlInP laser diode has shown a room temperature CW operation with a threshold current of 93 mA and an emission wavelength of 671 nm.