Realizing high performance flexible multilevel memory based on charge storage in Au nanoparticles and electrets

In this paper, we report on the pentacene-based field-effect transistors (FETs) and flexible nano-floating gate-based transistor memory (NFGM) devices that were fabricated on ultra-flexible 2 μm Parylene C, deposited on different substrates. All thin-film layers can be deposited at low temperatures. The electrical characteristics of the various FETs were evaluated and compared. Additionally, the flexible NFGM, with the structure of Pentacene (30 nm)/HSQ (19 nm)/Au NPs (10 nm)/PC (100 nm)/PMMA (160 nm)/PC (2 μm)/Kapton showed stable performance and achieved a large window of 23 V under ±40 V pulses operation, the I DS current on/off ratio exceeded 10 5 and the retention time was determined to be more than 10 8 s under bending conditions. Moreover, the NFGM device exhibited high-performance multilevel charge storage with five distinct current levels, and the underlying mechanisms were discussed. These results signify the potential for organic memory devices in various applications.