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September 12, 2025Open Access

Energy Deposition upon Swift Heavy Ion Impact in Silicon Nanostructures and Surfaces

PŽP. ŽugecUniversity of Zagreb MKMarko KarlušićRudjer Boskovic Institute

Key Points

The study finds that energy dissipation during swift heavy ion impacts is significant in silicon nanostructures.
Simulations show that primary electrons escape easily, affecting the material modification process.
Using the Geant4 code, the research explores ion impacts across various kinetic energy levels from 2.8 MeV to 280 MeV.
Energy deposition effects depend on geometry, with dimensions of nanostructures ranging from 5 to 100 nm.

Abstract

Material changes made through the energy deposition upon the swift heavy ion impact can be strongly influenced by size effects in the case of nanomaterials. In particular, the amount of energy available for material modification can be significantly reduced through dissipation via electron emission. Here, this open problem is studied using the Geant4 code with the MicroElectronics package. The impact of silicon ions with various kinetic energies (in a range between 2.8 MeV and 280 MeV) is simulated in silicon nanomaterials (nanocubes, nanowires and thin films) and on the surface of silicon. The dimensions of all studied geometries were between 5 and 100 nm. The presented results indicate that the amount of dissipated energy can be significant and should be considered when modelling changes in nanomaterials induced by swift heavy ion impacts, because primary electrons can easily escape from nanomaterials.

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