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Near-infrared (NIR) light-emitting diodes play a crucial role in a wide range of applications, including sensors, night vision displays, security systems, medicine, spectroscopy, and military applications. The potential for high-performance NIR perovskite light-emitting diodes (NIR-PeLEDs) has been highlighted with the impressive advancement of fluorescent perovskite thin films. These PeLEDs exhibit promising features such as a tunable band gap, high color purity, and low non-radiative recombination rates. Despite these advantages, the current state-of-the-art NIR-PeLEDs faces challenges primarily related to poor film quality and increased defect states, leading to limitations in external quantum efficiency (EQE) and operational stability. In addressing these issues, we present a novel dual interfacial modification approach involving the incorporation of fluorinated phenethylammonium iodide (F-PEAI), a bulky organic cation, at both the bottom and top interfaces of perovskite emitting films. The modified interfaces result in perovskite films with a smoother surface morphology, complete coverage, and high crystallinity, leading to a red-shifted fluorescence band extending toward 800 nm. Furthermore, the introduction of F-PEAI facilitates the formation of compact and fine grains in perovskite films, contributing to an enhanced photoluminescence quantum yield (PLQY). Consequently, NIR-PeLEDs modified with F-PEAI demonstrate improved EQE values coupled with enhanced operational stability. The combination of electrical, optical, and physical analyses of both films and devices underscores the effectiveness of the dual interface modification in developing efficient NIR perovskite LEDs suitable for practical applications.
Bae et al. (Fri,) studied this question.