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Flexoelectric effects in materials can bring novel physical properties that are absent in their perfect crystal, and have a wide range of applications, such as mechanical sensors and wrinkled triboelectric nanogenerators. In this work, electronic structures and transport properties of bended -In₂Se₃ monolayer are investigated through first-principles calculations and nonequilibrium Green's function (NEGF). We find that two different kinds of type-II band structures can be obtained in \~{}P and \~{}P flexed -In₂Se₃, which show opposite band bending. Carriers in the center of \~{}P and \~{}P flexed -In₂Se₃ are mainly holes and electrons, respectively, which dominate the current behavior of the -In₂Se₃ p-i-n (PIN) field-effect transistor (FET). The \~{}P PIN-FET has enhanced forward current and the rectification ratio due to the larger density of holes. Our study achieves the homogeneous junction through bended -In₂Se₃, which may simplify the device procession and be used as electromechanical sensors.
Chen et al. (Mon,) studied this question.