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The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this Letter, we study the role of epitaxial strain on the electronic behavior of thin SrIrO₃ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO₃ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.
Rimal et al. (Mon,) studied this question.