Advancements in GaN HEMT structures and applications: A comprehensive overview

Abstract Compared with silicon, GaN has advantages such as high electron mobility large band gap and high breakdown field strength. Therefore, GaN High Electron Mobility Transistors (HEMT) is resistant to high voltage and high temperature, and GaN HEMT performs well in high-frequency and high-power fields. Enhancement mode GaN HEMT is more suitable for most applications than depletion mode GaN HEMT due to enhancement mode GaN HEMT’s normally-off characteristic. This paper introduces cascode structure GaN HEMT and p-GaN gate structure GaN HEMT, as well as two improved structures, monolithically integrated Si-GaN cascoded FET and Hybrid Drain embedded Gate Injection Transistor, then compares the four structures and analyzes the advantages and disadvantages. Because of the unique advantages of GaN HEMT, many industries that require the use of high-frequency devices or high-power devices are very interested in the application research of GaN HEMT. This paper mainly introduces the research progress of GaN HEMT’s application in the three fields of radio frequency amplifiers, charger circuits, and LiDAR drivers, and the paper summarizes the advantages and current challenges of GaN HEMT, as well as the future of GaN HEMT’s development and application.