Key points are not available for this paper at this time.
This paper presents the investigation for memory capabilities of organic transistors with a PVP/P3HT dielectric-semiconductor interface. Fabricated p-channel devices on rigid silicon substrate operated at -20 V and exhibited excellent electrical stability and environmental resilience. Furthermore, these transistors with PVP/P3HT displayed short term memory (STM) capabilities in the presence of optoelectronic stimuli. The results indicate promising potential for this dielectric semiconductor combination in synaptic transistors for organic and flexible electronics applications.
Bhattacharjee et al. (Sun,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: