What question did this study set out to answer?

The aim is to address the development of low-voltage organic field-effect transistors (OFETs) to reduce power consumption.

February 8, 2026

Recent Progress in Polymer Gate Dielectrics for Low‐Voltage Organic Field‐Effect Transistors

Key Points

The aim is to address the development of low-voltage organic field-effect transistors (OFETs) to reduce power consumption.
Introduced basic structures of organic field-effect transistors (OFETs)
Summarized advancements in polymer gate dielectrics
Emphasized high-k polymers and polymer electrolytes
Discussed challenges and future research directions
Identified key roles of gate dielectrics in regulating performance and power consumption
Reviewed progress in materials like high-k polymers and hybrids
Highlighted issues with leakage current and operating voltage in devices

Abstract

ABSTRACT Organic field‐effect transistors (OFETs) are indispensable integral parts of the future wearable electronics such as artificial e‐skins, flexible displays, health monitors, and other areas. The power consumption is one of the important issues needed to be addressed for the commercialized of OFETs. Therefore, developing the low‐voltage operation OFETs is urgently needed. The gate is an important functional layer in OFETs, which isolate the charged transport layer and gate electrode, regulate electronic performance, and directly affect the power consumption. In this review, we firstly introduced the basic structures of the OFETs, and the roles of the gate dielectrics in OFETs. Next, we summarized the recent progress in polymer gate dielectrics for low‐voltage OFETs including high‐ k polymers, polymer electrolytes, polymer‐based hybrids, with emphasis on leakage current and operating voltage in the devices. Lastly, challenges and outline future research perspectives of polymer gate dielectrics for future low‐voltage flexible electronics are discussed in conclusion and outlooks.

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