This study presents a detailed electrical analysis of AlGaN/GaN/Si HEMTs grown by molecular beam epitaxy, using direct and pulse current, small-signal microwave, and deep-level transient spectroscopy (DLTS) techniques to investigate transport characteristics and defect-related effects. DC measurements revealed self-heating effects and leakage currents, while RF analysis highlighted the devices’ high-frequency capabilities alongside parasitic effects linked to deep-level traps. Pulsed I–V characterization demonstrated gate-lag and drain-lag behaviors associated with dynamic charge trapping. DLTS identified electron traps, emphasizing their critical role in device degradation and switching performance. The strong correlation between trap states and electrical behavior underlines the importance of defect control for enhancing efficiency and reliability.
Mosbahi et al. (Fri,) studied this question.