This work investigated the structural, morphological, electrical and photovoltaic properties of n-ZnNiO/p-Si heterostructures. ZnNiO nanocomposite thin films were fabricated on p-Si (100) substrates using pulsed laser deposition, enabling the formation of n-type oxide/p-type silicon heterojunctions. The crystalline structure and surface morphology of the deposited thin films were examined using X-ray diffraction and scanning electron microscopy, revealing well-defined crystalline features and uniform surface morphology. The electrical characteristics were analyzed through current–voltage measurements, allowing the extraction of key diode parameters. In addition, the optoelectronic response under ultraviolet illumination was investigated, demonstrating pronounced photosensitivity in the UV spectral range. Several important electrical and optoelectronic parameters relevant to ultraviolet photodetection were determined and discussed. The obtained results indicate that ZnNiO-based heterostructures combined with silicon substrates constitute a promising material platform for advanced optoelectronic and ultraviolet applications.
Virt et al. (Sat,) studied this question.