The thin-film source-gated transistor (SGT) structure (cross-section schematic in Fig. 1(a)) features many advantages for analog applications, such as low saturation voltage and output conductance, thanks to the overlap between the gate and the Schottky source contact 1. In this work, we measure and model low-frequency noise (LFN) in polysilicon thin-film SGTs for the first time, as the noise may represent a potential limit for the performance of analog circuits.
Chen et al. (Wed,) studied this question.