Characterisation of Si gradually doped InP epilayers grown by LP-MOVPE

Key Points

• The study shows how Si doping affects the growth of InP epilayers, influencing their properties.
• Significant differences in chemical composition were observed, indicating a nuanced doping effect.
• Assessment using LP-MOVPE techniques allows for precise control over the doping process in InP growth.
• These results highlight the potential for improved fabrication methods in semiconductor applications.