Developing indium tin oxide (ITO)-free devices is crucial for the large-scale commercialization of organic photovoltaics (OPVs) and organic photodetectors (OPDs). A major challenge is the low shunt resistance (Rsh) caused by pinholes in the active layer, which leads to significant leakage current and limits the performance of both devices. To address these issues, this work introduces a dual-anode interfacial engineering strategy using a solution-processed HXMoO3 interlayer to efficiently repair pinhole defects in the ITO-free devices and enhances Rsh by nearly 3 orders of magnitude and suppresses the trap-assisted recombination. As a result, for OPVs, the power conversion efficiency under 1000 lx illumination improves from 15.4% to 17.4%, while large-area devices (2.84 cm2) achieve a PCE of 15.0% at 1000 lx. For OPDs, the specific detectivity D* reaches 2.93 × 1013 Jones, nearly 1 order of magnitude higher than the control device. The strategy demonstrates universality across different active layer systems, offering a scalable and efficient approach to enabling high-performance, low-cost ITO-free organic optoelectronics.
Yu et al. (Mon,) studied this question.