Changes in growth conditions of ZnO thin films produced in the presence of different oxygen, changes in important properties such as crystal, surface properties, and absorption properties of the films were examined and reported. It is inferred from the XRD experimental results that the oxygen we applied to the films plays a role in the crystal structure changes of the films (grain size, strain value, dislocation density, etc.). The highest value of RMS roughness of the film is 8.58 nm and the lowest value of RMS roughness of the film is 1.08 nm, which corresponds to non-flow and 1 sccm flow film, respectively. AFM proved that films with nano-structured, tightly packed, grain properties were obtained in the produced films. Inference from UV analysis made is that the oxygen applied to the film caused small changes in the optical band gap values (in the range of about 3.30-3.32 eV). Except for 3 sccm oxygen state, all the films obtained were tightly packed, granulated and almost homogeneous and the nano property was clearly seen. All the results obtained show that the oxygen applied in the ZnO film process causes some changes in the physical properties of the film and this has an effect on the film quality and it is seen that these results can contribute to the production of ZnO thin film- based Light Emitting Diodes (LEDs).
Asim MANTARCI (Fri,) studied this question.