In the present work, perovskite solar cell with Sn based absorber layer (CH3NH3SnI3) have been modelled and validated with solar cell capacitance simulator. The structure of the absorber performed on FTO/TiO2/CH3NH3SnI3/Cu2O to analyse the efficiency of power conversion. Efficiency optimization of the proposed device model was carried out by variation in thickness, defect density, interface defect densities and doping concentrations of the absorber layer. It was evident that generation of charge carriers is directly proportional to the thickness of absorber layer up to certain extent and then varying nonlinearly. For optimal doping concentrations of 1 × 1019 cm–3 in both HTL and ETL layers, corresponding VOC, JSC, FF % and η are 0.8847 V, 30.52 mA/cm2, 78.95 and 21.32%, respectively. However, with doping concentrations of 1 × 1016 cm–3 and thickness ~600 nm in absorber layer, the power conversion efficiency (PCE) were raised to 30.06%. Proposed optimized device model is a found to be superior than that of similar device counterpart with VOC ~ 1.05 V, JSC ~ 33.35 mA/cm2 and FF ~ 85.45%, respectively. Such device can be an alternative for making environmentally friendly solar cells with high efficiency. High conversion efficiency possibly attributed to the good absorption capability of the material, energy band alignment and suitable doping concentrations at ETL/HTL layer.
Bhowmik et al. (Fri,) studied this question.
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