Presented here is a biodegradable, bioinspired synaptic phototransistor (SPT) based on an electrolyte‐gated field‐effect transistor (EGFET) architecture for sustainable artificial intelligence vision systems (AIVSs). The EGFET is designed to be zero waste and degrades to benign end products at the end‐of‐life. The device is fabricated onto a poly(butylene adipate‐ co ‐terephthalate)/poly(lactic acid) (PBAT/PLA) bioderived substrate, which uses reduced graphene oxide (rGO) electrodes, a ZnO active layer, and honey as a natural gate electrolyte, enabling simultaneous sensing and memory of UV light stimuli. Through charge trapping/detrapping and field‐effect modulation, the device exhibits key neuromorphic behaviors including short‐ and long‐term plasticity, spike‐time‐dependent plasticity (STDP), and light‐response plasticity at low operating voltages and energy consumption. The EGFET demonstrates tunable memory via scan rate and sweep range modulation and maintains stable synaptic responses under varying UV intensities and exposure durations. A learning model simulating UV‐induced skin and ocular damage is proposed, highlighting the device's potential for wearables and health‐monitoring applications. Overall, the work demonstrates the feasibility of manufacturing SPT devices based on EGFETS using eco‐friendly materials for neuromorphic electronics while minimizing the growing e‐waste problem in electronics.
Serghiou et al. (Tue,) studied this question.