ABSTRACT Lanthanide ion‐doped halide perovskites have emerged as a transformative approach in optoelectronic applications, offering significant advancements in the performance and stability of devices such as solar cells, LEDs, and photodetectors. This review systematically explores the fundamental principles of lanthanide ion doping, detailing its effects on the optoelectronic properties and structural integrity of perovskite materials. We provide an extensive overview of the various lanthanide ions, their doping mechanisms, and their roles in enhancing material stability, optical properties, and device efficiency. Furthermore, we discuss the challenges and future prospects of lanthanide‐doped perovskites, emphasizing the need for a deeper understanding and innovation in this rapidly evolving field. Through a comprehensive analysis, this review serves as a critical resource for researchers and engineers aiming to leverage lanthanide doping for the next generation of high‐performance optoelectronic devices.
An et al. (Sat,) studied this question.