Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO x /tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10 3 , data retention >50 hours and endurance >10 9 switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO x /W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO X /W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.
Zhao et al. (Thu,) studied this question.