ABSTRACT We propose an Au‐free ohmic contact for diamond using a Ti/Al/Ti/TiN multi‐layer metal stack, achieving an ultra‐low specific ohmic contact resistance of 3.9×10 −5 Ω·cm 2 . Building on this optimized contact structure, diamond Schottky barrier diodes (SBDs) are fabricated, exhibiting a breakdown voltage of 1770 V. This work provides a feasible and cost‐effective route for the large‐scale commercialization of diamond‐based electronic devices.
Mi et al. (Thu,) studied this question.