Results of residual resistivity studies including resistivity recovery one after low-temperature electron irradiation have confirmed the results obtained earlier by positron annihilation technique (JNM 508(2018) 100- 106). According to the previous and present studies in Fe- (13- 16 at %) Cr alloys doped with sufficiently high amount of Si (~1.5 - 2 at %) the Si aggregates (clusters consisted from several Si atoms) are formed, which are able to capture and hold the single self- interstitial atoms (SIAs) and vacancies up to 370 K and 420 K respectively. Besides it has been found that aggregates are formed as a result of interaction of each single defect with the nearest impurity atoms and formation mechanisms differ in the cases of SIAs and vacancies. Long- range migration of vacancies only is suppressed at concentration of 1.5 at % Si, while at concentration of 1.9 at % Si already long- range migration of as vacancies as SIAs is blocked. Si aggregates in the latter case promote the survival of the larger part of single defects formed under irradiation including, possibly, those in close pairs.
A.L. Nikolaev (Wed,) studied this question.