This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements. Carrier density and Ohmic contact resistivity were independently extracted as a function of Fin width, enabling accurate calculation of internal electric field and drift velocity from pulsed I–V curves. It is revealed that the drift velocity decreases with the narrowing of Fin width due to enhanced sidewall influence, and multi-channel structures show higher drift velocity thanks to weaker interaction between electrons and longitudinal optical phonons. This measurement method provides a quantitative approach for studying carrier transport behavior under high electric field, offering a fundamental tool for Fin-based device design and modeling.
Wang et al. (Mon,) studied this question.