High gain and low sidelobe level remain challenges for 5G millimeter-wave antenna systems. This paper presents a low-sidelobe, high-gain microstrip array antenna based on non-uniformly slotted identical-sized radiating patch, designed to simultaneously enhance gain and suppress sidelobe levels for 5G millimeter-wave (mmWave) communication systems. The key innovation lies in the use of an intermediate-deep, edge-shallow non-uniform slotting technique to precisely control the surface current distribution of the radiating elements, thereby achieving significant sidelobe level (SLL) suppression and antenna isolation enhancement without increasing the physical footprint of each element. The final design operates at a center frequency of 78.5 GHz, achieving a maximum gain of 15 dB and suppressing the first sidelobe below −20 dB, outperforming conventional linear arrays. It is noteworthy that, compared with a Chebyshev-distributed array, the patch width is reduced to only 1 mm, thereby enabling a compact array layout. The unit width dimension is reduced by over 40%, while in a densely packed array configuration, the inter-antenna isolation is increased by more than 18 dB. This current-distribution engineering approach offers a novel, structure-efficient pathway for designing high-performance, densely packed mmWave antenna arrays, circumventing the need for additional decoupling structures or enlarging the antenna spacing. Simulation results show that the average isolation has increased by more than 5 dB from 76 GHz to 79 GHz. Finally, the same design method was used to design a 24 GHz antenna, which was then fabricated and tested. The antenna achieved a sidelobe suppression of −17 dB.
Zhou et al. (Wed,) studied this question.