Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

Abstract In very small electronic devices the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance—referred to as a random telegraph signal (RTS). The study of RTSs has provided a powerful means of investigating the capture and emission kinetics of single defects, has demonstrated the defect origins of low-frequency (1/ƒ) noise in these devices, and has provided new insight into the nature of defects at the Si/SiO2 interface.