ABSTRACT The substitutional doping of transition metal dichalcogenide (TMD) semiconductors can alter their physical, chemical, and structural properties. However, achieving precise and consistent doping remains challenging. In this work, chromium (Cr)‐doped tungsten diselenide (WSe 2 ) nanosheets were synthesized on SiO 2 /Si substrates using the atmospheric pressure chemical vapor deposition (APCVD) method. The morphology and thickness of the synthesized nanosheets were characterized by optical microscopy, scanning electron microscopy, and atomic force microscopy, revealing triangular and hexagonal domains with monolayer and bilayer thicknesses. Raman spectroscopy and photoluminescence measurements indicate noticeable modifications in vibrational and optical properties upon chromium incorporation, including a shift in Raman modes and a redshift in the PL emission peak. The successful incorporation of Cr into the WSe 2 crystal is confirmed by energy‐dispersive spectroscopy and x‐ray photoelectron spectroscopy. These results demonstrate that chromium doping effectively modifies the optical characteristics of WSe 2 , making it a promising platform for tunable optoelectronic materials.
Hossain et al. (Mon,) studied this question.
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