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March 4, 2020Open Access

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

LWLei WuUniversity of North Carolina at Chapel Hill HLHongxia LiuGuilin University of Technology JLJinfu LinZhangzhou Normal University

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Abstract

s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

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Wu et al. (Wed,) studied this question.

synapsesocial.com/papers/6a06a8f92edded7c7b840f05 https://doi.org/https://doi.org/10.3390/nano10030457

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Autoconformité et haute performance des RRAM Pt/HfOx/Ti obtenues par recuit | Synapse