The CuO nanoparticles (NPs) were synthesized using a facile Sol-gel method. Characterization was performed using FTIR, UV–visible spectroscopy, XRD, AFM, and SEM techniques. Both XRD and SEM analyses indicate an average particle size ranging between 25 and 30 nm. CuO NPs provide 98.7% corrosion inhibition efficiency at a concentration of 100 ppm for Al sheet in 0.5 M HCl solution. Antibacterial activity was tested against Gram-negative bacteria E. coli and Gram-positive bacterium S. aureus and compared with six standard antibiotics (hexa disk) No antibacterial activity was seen against E. coli . The NPs exhibited an inhibitory zone of 17 mm towards S. aureus . NPs show an indirect band gap of 2.31 eV. Non-linear relationship between change in weight and magnetic field suggests presence of complex magnetic interactions within NPs. NPs exhibit high photocatalytic activity (80%) towards Methylene Blue dye under UV light. With enhanced photocatalytic, magnetic, antibacterial, and anticorrosive qualities, CuO NPs are proven to be multifunctional nanomaterials. CuO NPs were synthesized using a facile Sol-gel method. Characterization was performed using FTIR, UV–visible spectroscopy, XRD, AFM, and SEM techniques. CuO NPs provide 98.7% corrosion inhibition efficiency for Al sheet in 0.5 M HCl solution. Antibacterial activity was tested against Gram-negative bacteria E. coli and Gram-positive bacterium S. aureus and compared with six standard antibiotics (hexa disk) The NPs exhibited an inhibitory zone of 17 mm towards S. aureus . NPs show an indirect band gap of 2.31 eV. Magnetic studies have proved complex magnetic interactions within NPs. NPs exhibit high photocatalytic activity (80%) towards Methylene Blue dye under UV light illumination. • CuO NPs were prepared by the facile Sol-gel method. • Antibacterial activity was tested against S. aureus and E. coli . • Shows photocatalytic activity against MB dye (80%) in UV light. • Shows 98.7% corrosion inhibition efficiency against Al sheet in HCl medium. • NPs show a direct band gap of 2.31 eV, proving a semiconductor nature.
Parul et al. (Thu,) studied this question.