Metal oxide semiconductor-based hydrogen sensors: material engineering strategies for performance enhancement

Key Points

• The aim is to explore various material engineering strategies to improve the performance of metal oxide semiconductor (MOS) hydrogen sensors.
• Review of existing literature on MOS hydrogen sensors and their material properties.
• Analysis of different sensing mechanisms related to hydrogen detection.
• Evaluation of design strategies for optimizing sensor performance.
• Identified key material properties that significantly enhance sensor performance.
• Outlined effective design strategies for improving sensing mechanisms.
• Highlighted the importance of the interplay between materials and sensing design in achieving high-performance sensors.