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We report on a thickness-extensional-mode piezoelectric resonator consisting of a ZnO/SiO2 diaphragm supported by a silicon wafer. It is found that the temperature coefficient of frequency can be reduced to zero by adjusting the ZnO/SiO2 thickness ratio. A temperature coefficient of frequency as low as 10 ppm/°C was experimentally obtained.
Nakamura et al. (Thu,) studied this question.