CXXXV. Ambipolar thermodiffusion of electrons and holes in semiconductors

Summary The purpose of this paper is to bring to notice, and discuss the consequences of, the phenomenon of ambipolar diffusion of electrons and holes down a temperature gradient in a semiconductor. A formula for the magnitude of the ambipolar flux is derived, and is applied to the electronic contribution to the thermal conductivity and to the Nernst Effect. The anomalous thermal conductivity of indium antimonide, reported by Busch and Schneider, cannot be accounted for in terms of the energy transported by this ambipolar flow.