A CMOS photosensor array for 3D imaging using pulsed laser

A 32×2 pixel optical time of flight range sensor in standard 0.5 μm CMOS acquires up to 20k BD-images/s combines CDS, S&H, multiple double short time integration, a high-speed synchronous shutter, and a phase synchronizer enabling exposures <30 ns with <5.2 W/m/sup 2/ NEP. This CMOS imager chip for 3D imaging applications contains a photodiode array and the aforementioned features enable optical TOF measurements of laser pulses reflected from a target. The 42 mm/sup 2/ chip dissipates 330 mW.