Key points are not available for this paper at this time.
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnOx) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.
Martins et al. (Mon,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: