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The integrated gate commutated thyristor (IGCT) includes all the important innovations needed for future power electronic applications. The IGCT is an important contribution to high power electronics. It will be the key component for future medium to high-voltage applications from 0.5 MVA up to several 100 MVA. It inherently enables simple and robust series connection of high power turn-off devices for high power applications. Due to its additional advantages of low cost, low complexity and high efficiency, compared with any other turn-off device, the IGCT has no real competition fear in this power range. This paper discusses the work of one manufacturer in the development of the IGCT and its characteristics.
Steimer et al. (Thu,) studied this question.
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