Key points are not available for this paper at this time.
The successful design and production of high density, high speed monolithic memory circuits that can operate efficiently over wide current ranges can be directly attributed to the development of a new silicon process technology based on the (100) crystal orientation. To provide optimum capability to fabricate these circuits with high yields, process modifications to accommodate larger starting substrates (wafers) have also been adopted. Detailed electrical characterization of the resulting devices has confirmed improved circuit operation, demonstrating that improved gain at low current and good junction quality are consequences of the process modifications.
Collins et al. (Sat,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: