Power amplifiers are one of the most important microwave components and key equipment in satellite transponder subsystems. It plays a significant role in enhancing the overall capabilities of satellite systems, optimizing thermal design, and ensuring reliability. The rapid development of High Throughput Satellites (HTS) and global mobile communication satellites imposes challenges to power amplifier design. This paper presents a dual-band Doherty power amplifier (DPA) with a hybrid GaN HEMT device and a commercial transistor that can operate simultaneously at 0.9 GHz and 2.14 GHz. At 6 dB output power back-off (OBO), the proposed amplifier achieves drain efficiencies of 42% and 37% at the two frequency bands respectively. When excited by a 20 MHz 16 QAM signal, it exhibits adjacent channel power ratios (ACPR) of −45.4 dBc and −48.6 dBc at output power levels of 34.8 dBm and 34.9 dBm respectively. A novel dual-band offset line structure was employed to achieve the required dual-band load modulation. The proposed DPA is well-suited for application in dual-band wireless communication systems.
Li et al. (Mon,) studied this question.